Silver Sintering for Silicon Carbide Die Attach: Process Optimization and Structural Modeling

The increasing demand in automotive markets is leading the semiconductor industries to develop high-performance and highly reliable power devices. Silicon carbide MOSFET chips are replacing silicon-based solutions through their improved electric thermal capabilities. In order support development of these novel semiconductors, packaging technologies evolving provide enough products. Silver sintering one most promising for die attach. Due superior reliability properties with respect conventional soft solder compounds, dedicated flow physical analyses should be designed employed process optimization durability assessment. This paper proposes an experimental methodology optimize pressure value applied during silver manufacturing a silicon molded package. evaluation best based on scanning electron microscopy performed after liquid-to-liquid shock test. Furthermore, layer degradation monitored stress by acoustic measurement temperature sensitive parameter. Moreover, mechanical elastoplastic behavior characterized uniaxial tensile test bulk sample finite element analysis developed predict as function void fraction inside layer.